Electronic Packaging Science and Technology
1. Auflage Januar 2022
336 Seiten, Hardcover
Wiley & Sons Ltd
ISBN:
978-1-119-41831-3
John Wiley & Sons
Kurzbeschreibung
This is a must-have book on the topic of electronic packaging technology -- covering the basics of the technology, electric circuit design for packaging, and the processes related to electronic packaging.
Must-have reference on electronic packaging technology!
The electronics industry is shifting towards system packaging technology due to the need for higher chip circuit density without increasing production costs. Electronic packaging, or circuit integration, is seen as a necessary strategy to achieve a performance growth of electronic circuitry in next-generation electronics. With the implementation of novel materials with specific and tunable electrical and magnetic properties, electronic packaging is highly attractive as a solution to achieve denser levels of circuit integration.
The first part of the book gives an overview of electronic packaging and provides the reader with the fundamentals of the most important packaging techniques such as wire bonding, tap automatic bonding, flip chip solder joint bonding, microbump bonding, and low temperature direct Cu-to-Cu bonding. Part two consists of concepts of electronic circuit design and its role in low power devices, biomedical devices, and circuit integration. The last part of the book contains topics based on the science of electronic packaging and the reliability of packaging technology.
Preface
Chapter 1 Introduction
1.1 Introduction
1.2 Impact of Moore's law on Si technology
1.3 5G technology and AI applications
1.4 3D IC packaging technology
1.5 Reliability science and engineering
1.6 The future of electronic packaging technology
1.7 Outline of the book
References
Figures Caption
Part I (Chapter 2 to Chapter 5)
Chapter 2 Cu-to-Cu and Other Bonding Technologies in Electronic Packaging
2.1 Introduction
2.2 Wire bonding
2.3 Tape automated bonding
2.4 Flip chip solder joint bonding
2.5 Micro-bump bonding
2.6 Cu-to-Cu direct bonding
2.6.1 Critical factors for Cu-to-Cu bonding
2.6.2 Analysis of Cu-to-Cu bonding mechanism
2.6.3 Microstructures at the Cu-to-Cu bonding interface
2.7 Hybrid bonding
2.8 Reliability - Electromigration and temperature cycling tests
References
Figures Caption
Problem
Chapter 3 Randomly Oriented and (111) Uni-directionally Oriented Nanotwin Copper
3.1 Introduction
3.2 Formation mechanism of nanotwin Cu
3.3 In-situ measurement of stress evolution during nano-twin deposition
3.4 Electrodeposition of randomly-oriented nanotwin copper
3.5 Formation of uni-directionally (111)-oriented and nanotwin copper
3.6 Grain growth of [111] oriented nt-Cu
3.7 Uni-directional growth of eta-Cu6Sn5 in microbumps on [111] oriented nt-Cu
3.8 Low thermal-budget Cu-to-Cu bonding using [111]-oriented nt-Cu
3.9 Nanotwin Cu redistribution layer for fanout package and 3D integration
References
Figures Caption
Problems
Chapter 4 Solid-Liquid Interfacial Diffusion Reactions (SLID) between Copper and Solder
4.1 Introduction
4.2 Kinetic consideration of scallop-type growth in SLID
4.3 A simple model for the growth of mono-size hemispheres
4.4 Theory of flux-driven ripening
4.5 Measurement of the nano-channel width between two scallops
4.6 Extremely rapid grain growth in scallop-type Cu6Sn5 in SLID
References
Figures Caption
Problems
Chapter 5 Solid State Reactions between Solder and Copper
5.1 Introduction
5.2 Layer-type growth of IMC in solid state reaction
5.3 Wagner diffusivity
5.4 Kirkendall void formation in Cu3Sn
5.5 Side wall reaction to form porous Cu3Sn in micro-bumps
5.6 Effect of surface diffusion on IMC formation in pillar-type micro-bumps
References
Figures Caption
Problems
Part II (Chapter 6 to Chapter 8)
Chapter 6 Essence of Integrated Circuits and Packaging Design
6.1 Introduction
6.2 Transistor and Interconnect Scaling
6.3 Circuit Design and Large Scale Integration
6.4 System-on-Chip (SoC) and Multi-core Architectures
6.5 System-in-Package (SiP) and Package Technology Evolution
6.6 3D IC Integration and 3D Silicon Integration
6.7 Heterogeneous Integration: An Introduction
References
Figures Caption
Problems
Chapter 7 Performance, Power, Thermal and Reliability
7.1 Introduction
7.2 Transistors and Memories Basics
7.3 Performance: A Race in Early IC Design
7.4 Trending in Low Power
7.5 Tradeoff between Performance and Power
7.6 Power Delivery and Clock Distribution Networks
7.7 Low Power Design Architectures
7.8 Thermal Problems in IC and Package
7.9 Signal and Power Integrity (SI/PI)
7.10 Robustness: Reliability and Variability
References
Figures Caption
Problems
Chapter 8 2.5D/3D System-in-Packaging Integration
8.1 Introduction
8.2 2.5D IC: Redistribution Layer (RDL) and TSV-Interposer
8.3 2.5D IC: Silicon, Glass, and Organic Substrates
8.4 2.5D IC: HBM on Silicon Interposer
8.5 3D IC: Memory Bandwidth Challenge for High Performance Computing
8.6 3D IC: Electrical and Thermal TSVs
8.7 3D IC: 3D-stacked Memory and Integrated Memory Controller
8.8 Innovative Packaging for Modern Chips/Chiplets
8.9 Power Distribution for 3D IC Integration
8.10 Challenge and Trend
References
Figures Caption
Problems
Part III (Chapter 9 to Chapter 14)
Chapter 9 Irreversible Processes in Electronic Packaging Technology
9.1 Introduction
9.2 Flow in open systems
9.3 Entropy production
9.3.1 Electrical conduction
9.3.1.1 Joule heating
9.3.2 Atomic diffusion
9.3.3 Heat conduction
9.3.4 Temperature is a variable
9.4 Cross-effects in irreversible processes
9.5 Cross-effect between atomic diffusion and electrical conduction
9.5.1 Electromigration and stress-migration in Al strips
9.6 Cross-effect between atomic diffusion and heat conduction
9.6.1 Thermomigration in unpowered flip chip solder joints
9.7 Cross-effect between heat conduction and electrical conduction
9.7.1 Seebeck effect
9.7.2 Peltier effect
References
Figures Caption
Problems
Chapter 10 Electromigration
10.1 Introduction
10.2 To compare the parameters in atomic diffusion and electrical conduction
10.3 Basic of electromigration
10.3.1 Electron wind force
10.3.2 Calculation of the effective charge number
10.3.3 Atomic flux divergence
10.3.4 Back stress in electromigration
10.4 Current crowding and electromigration in 3-dimensional circuits
10.4.1 Void formation in the low current density region
10.4.2 Current density gradient force in electromigration
10.4.3 Current crowding induced pancake-type void formation in solder joints
10.5 Joule heating and heat dissipation
10.5.1 Joule heating and electromigration
10.5.2 Joule heating on mean-time-to-failure in electromigration
References
Figures Caption
Problems
Chapter 11 Thermomigration
11.1 Introduction
11.2 Driving force of thermomigration
11.3 Analysis of heat of transport, Q* 11.4 Thermomigration due to heat transfer between neighboring pairs of powered and unpowered solder joints
References
Figures Caption
Problems
Chapter 12 Stress-Migration
12.1 Introduction
12.2 Chemical potential in a stressed solid
12.3 Stoney's equation of biaxial stress in thin films
12.4 Diffusional creep
12.5 Spontaneous Sn whisker growth
12.5.1 Morphology
12.5.2 Driving force
12.5.3 Kinetics of spontaneous Sn whisker growth
12.5.4 Electromigration induced Sn whisker growth in solder join
12.6 Comparison of driving forces among electromigration, thermomigration, and stress-migration
12.6.1 Products of force
References
Figures Caption
Problems
Chapter 13 Failure Analysis
13.1 Introduction
13.2 Microstructure change with and without lattice shift
13.3 Statistical analysis of failure
13.3.1 Black's equation of MTTF for electromigration
13.3.2 Weibull distribution function and JMA theory of phase transformations
13.4 A unified model of MTTF for electromigration, thermomigration, and stress-migration
13.4.1 Revisit of Black's equation of MTTF for electromigration
13.4.2 MTTF for thermomigration
13.4.3 MTTF for stress-migration
13.4.4 The link among MTTF for electromigration, thermomigration, and stress-migration
13.4.5 MTTF equations for any other irreversible processes in open systems
13.5 Failure analysis in mobile technology
13.5.1 Joule heating enhanced electromigration failure of weak-link in 2.5D IC technology
13.5.2 Joule heating induced thermomigration failure due to thermal crosstalk in 2.5D IC technology
References
Figures Caption
Problems
Chapter 14 Artificial Intelligence on Electronic Packaging Reliability
14.1 Introduction
14.2 To change time-dependent event to time-independent event
14.3 To deduce MTTF from mean microstructure change to failure
14.4 Summary
Chapter 1 Introduction
1.1 Introduction
1.2 Impact of Moore's law on Si technology
1.3 5G technology and AI applications
1.4 3D IC packaging technology
1.5 Reliability science and engineering
1.6 The future of electronic packaging technology
1.7 Outline of the book
References
Figures Caption
Part I (Chapter 2 to Chapter 5)
Chapter 2 Cu-to-Cu and Other Bonding Technologies in Electronic Packaging
2.1 Introduction
2.2 Wire bonding
2.3 Tape automated bonding
2.4 Flip chip solder joint bonding
2.5 Micro-bump bonding
2.6 Cu-to-Cu direct bonding
2.6.1 Critical factors for Cu-to-Cu bonding
2.6.2 Analysis of Cu-to-Cu bonding mechanism
2.6.3 Microstructures at the Cu-to-Cu bonding interface
2.7 Hybrid bonding
2.8 Reliability - Electromigration and temperature cycling tests
References
Figures Caption
Problem
Chapter 3 Randomly Oriented and (111) Uni-directionally Oriented Nanotwin Copper
3.1 Introduction
3.2 Formation mechanism of nanotwin Cu
3.3 In-situ measurement of stress evolution during nano-twin deposition
3.4 Electrodeposition of randomly-oriented nanotwin copper
3.5 Formation of uni-directionally (111)-oriented and nanotwin copper
3.6 Grain growth of [111] oriented nt-Cu
3.7 Uni-directional growth of eta-Cu6Sn5 in microbumps on [111] oriented nt-Cu
3.8 Low thermal-budget Cu-to-Cu bonding using [111]-oriented nt-Cu
3.9 Nanotwin Cu redistribution layer for fanout package and 3D integration
References
Figures Caption
Problems
Chapter 4 Solid-Liquid Interfacial Diffusion Reactions (SLID) between Copper and Solder
4.1 Introduction
4.2 Kinetic consideration of scallop-type growth in SLID
4.3 A simple model for the growth of mono-size hemispheres
4.4 Theory of flux-driven ripening
4.5 Measurement of the nano-channel width between two scallops
4.6 Extremely rapid grain growth in scallop-type Cu6Sn5 in SLID
References
Figures Caption
Problems
Chapter 5 Solid State Reactions between Solder and Copper
5.1 Introduction
5.2 Layer-type growth of IMC in solid state reaction
5.3 Wagner diffusivity
5.4 Kirkendall void formation in Cu3Sn
5.5 Side wall reaction to form porous Cu3Sn in micro-bumps
5.6 Effect of surface diffusion on IMC formation in pillar-type micro-bumps
References
Figures Caption
Problems
Part II (Chapter 6 to Chapter 8)
Chapter 6 Essence of Integrated Circuits and Packaging Design
6.1 Introduction
6.2 Transistor and Interconnect Scaling
6.3 Circuit Design and Large Scale Integration
6.4 System-on-Chip (SoC) and Multi-core Architectures
6.5 System-in-Package (SiP) and Package Technology Evolution
6.6 3D IC Integration and 3D Silicon Integration
6.7 Heterogeneous Integration: An Introduction
References
Figures Caption
Problems
Chapter 7 Performance, Power, Thermal and Reliability
7.1 Introduction
7.2 Transistors and Memories Basics
7.3 Performance: A Race in Early IC Design
7.4 Trending in Low Power
7.5 Tradeoff between Performance and Power
7.6 Power Delivery and Clock Distribution Networks
7.7 Low Power Design Architectures
7.8 Thermal Problems in IC and Package
7.9 Signal and Power Integrity (SI/PI)
7.10 Robustness: Reliability and Variability
References
Figures Caption
Problems
Chapter 8 2.5D/3D System-in-Packaging Integration
8.1 Introduction
8.2 2.5D IC: Redistribution Layer (RDL) and TSV-Interposer
8.3 2.5D IC: Silicon, Glass, and Organic Substrates
8.4 2.5D IC: HBM on Silicon Interposer
8.5 3D IC: Memory Bandwidth Challenge for High Performance Computing
8.6 3D IC: Electrical and Thermal TSVs
8.7 3D IC: 3D-stacked Memory and Integrated Memory Controller
8.8 Innovative Packaging for Modern Chips/Chiplets
8.9 Power Distribution for 3D IC Integration
8.10 Challenge and Trend
References
Figures Caption
Problems
Part III (Chapter 9 to Chapter 14)
Chapter 9 Irreversible Processes in Electronic Packaging Technology
9.1 Introduction
9.2 Flow in open systems
9.3 Entropy production
9.3.1 Electrical conduction
9.3.1.1 Joule heating
9.3.2 Atomic diffusion
9.3.3 Heat conduction
9.3.4 Temperature is a variable
9.4 Cross-effects in irreversible processes
9.5 Cross-effect between atomic diffusion and electrical conduction
9.5.1 Electromigration and stress-migration in Al strips
9.6 Cross-effect between atomic diffusion and heat conduction
9.6.1 Thermomigration in unpowered flip chip solder joints
9.7 Cross-effect between heat conduction and electrical conduction
9.7.1 Seebeck effect
9.7.2 Peltier effect
References
Figures Caption
Problems
Chapter 10 Electromigration
10.1 Introduction
10.2 To compare the parameters in atomic diffusion and electrical conduction
10.3 Basic of electromigration
10.3.1 Electron wind force
10.3.2 Calculation of the effective charge number
10.3.3 Atomic flux divergence
10.3.4 Back stress in electromigration
10.4 Current crowding and electromigration in 3-dimensional circuits
10.4.1 Void formation in the low current density region
10.4.2 Current density gradient force in electromigration
10.4.3 Current crowding induced pancake-type void formation in solder joints
10.5 Joule heating and heat dissipation
10.5.1 Joule heating and electromigration
10.5.2 Joule heating on mean-time-to-failure in electromigration
References
Figures Caption
Problems
Chapter 11 Thermomigration
11.1 Introduction
11.2 Driving force of thermomigration
11.3 Analysis of heat of transport, Q* 11.4 Thermomigration due to heat transfer between neighboring pairs of powered and unpowered solder joints
References
Figures Caption
Problems
Chapter 12 Stress-Migration
12.1 Introduction
12.2 Chemical potential in a stressed solid
12.3 Stoney's equation of biaxial stress in thin films
12.4 Diffusional creep
12.5 Spontaneous Sn whisker growth
12.5.1 Morphology
12.5.2 Driving force
12.5.3 Kinetics of spontaneous Sn whisker growth
12.5.4 Electromigration induced Sn whisker growth in solder join
12.6 Comparison of driving forces among electromigration, thermomigration, and stress-migration
12.6.1 Products of force
References
Figures Caption
Problems
Chapter 13 Failure Analysis
13.1 Introduction
13.2 Microstructure change with and without lattice shift
13.3 Statistical analysis of failure
13.3.1 Black's equation of MTTF for electromigration
13.3.2 Weibull distribution function and JMA theory of phase transformations
13.4 A unified model of MTTF for electromigration, thermomigration, and stress-migration
13.4.1 Revisit of Black's equation of MTTF for electromigration
13.4.2 MTTF for thermomigration
13.4.3 MTTF for stress-migration
13.4.4 The link among MTTF for electromigration, thermomigration, and stress-migration
13.4.5 MTTF equations for any other irreversible processes in open systems
13.5 Failure analysis in mobile technology
13.5.1 Joule heating enhanced electromigration failure of weak-link in 2.5D IC technology
13.5.2 Joule heating induced thermomigration failure due to thermal crosstalk in 2.5D IC technology
References
Figures Caption
Problems
Chapter 14 Artificial Intelligence on Electronic Packaging Reliability
14.1 Introduction
14.2 To change time-dependent event to time-independent event
14.3 To deduce MTTF from mean microstructure change to failure
14.4 Summary
King-Ning Tu, PhD, is TSMC Chair Professor at the National Chiao Tung University in Taiwan. He received his doctorate in Applied Physics from Harvard University in 1968.
Chih Chen, PhD, is Chairman and Distinguished Professor in the Department of Materials Science and Engineering at National Yang Ming Chiao Tung University in Taiwan. He received his doctorate in Materials Science from the University of California at Los Angeles in 1999.
Hung-Ming Chen, PhD, is Professor in the Institute of Electronics at National Yang Ming Chiao Tung University in Taiwan. He received his doctorate in Computer Sciences from the University of Texas at Austin in 2003.
Chih Chen, PhD, is Chairman and Distinguished Professor in the Department of Materials Science and Engineering at National Yang Ming Chiao Tung University in Taiwan. He received his doctorate in Materials Science from the University of California at Los Angeles in 1999.
Hung-Ming Chen, PhD, is Professor in the Institute of Electronics at National Yang Ming Chiao Tung University in Taiwan. He received his doctorate in Computer Sciences from the University of Texas at Austin in 2003.
