Crystal Growth Technology

GENERAL ASPECTS OF CRYSTAL GROWTH TECHNOLOGY
Equilibrium thermodynamics and phase diagrams in crystal production processes
Equilibrium thermodynamics fundamentals of crystal production processes
Thermodynamics, origin and characterisation of defects
Thermophysical properties of crystal growth melts
SIMULATION OF INDUSTRIAL GROWTH PROCESSES
Thermal modeling and experimental studies for the development of the industrial growth of compound semiconductors by the vertical gradient freeze technique
Modelling of Czochralski growth of large Si crystals in industrial systems with and without magnetic fields
Global analysis of effects of magnetic field configuration on melt-crystal interface shape and melt flow in CZ-Si crystal growth
Modelling analysis of VCz growth of GaAs bulk crystals and other low-gradient crystal pulling
COMPOUND SEMICONDUCTORS
GaAs growth technology
Diameter control and interface shape stability in Czochralski Growth
Use of forced mixing via the accelerated crucible rotation technique (ACRT) in the Bridgman growth of cadmium mercury telluride (CMT)
Ga1-xInxSb single crystal growth using the vertical Bridgman technique with accelerated crucible rotation
X-ray characterisation of industrial crystals
SCINTILLATOR CRYSTALS
Continuous growth of large halide scintillation crystals
OXIDES
Growth of langasite-type crystals and their device properties
Flame-fusion (Verneuil) growth of oxides
CRYSTAL GROWTH FOR SUSTAINING ENERGY
Crystal growth technology (CGT) for energy: saving energy and renewable energy
CRYSTAL MACHINING
Crystal sawing technology
Plasma chemical vaporization machining and elastic emission machining

"The book is a must-have for industry and research." (Metall, October 2008)

Professor Hans J. Scheel started the Scheel Consulting company in 2001 after retiring from the Swiss Federal Institute of Technology. Starting out with a chemical background, he has more than 40 years of experience with crystal growth and epitaxy in university as well as industry. For his achievements in bulk crystal growth and epitaxy technologies, he received awards from IBM and from Swiss, British, Korean Crystal Growth Associations, was elected member of the Russian Academy of Engineering Sciences, and received his D.Sc. from Tohoku University, Japan. He is co-author and editor of 6 books, author of more than 100 publications and patents, has organized international workshops on crystal technology and has been visiting professor at Osaka and Tohoku Universities, Japan, as well as Shandong University, China.

Dr. Peter Capper is a Materials Team Leader at SELEX Sensors and Airborne Systems Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material Cadmium Mercury Telluride (CMT). He holds the patent for the application of the accelerated crucible rotation technique to CMT growth and is recognised as a world authority on CMT. He has written and edited 6 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium and a SPIE Symposium and has edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics.

H. J. Scheel, Scheel Consulting, Pfaeffikon, Switzerland; P. Capper, SELEX Sensors and Airborne Systems Infrared Ltd., Southampton, UK