Insulated Gate Bipolar Transistor IGBT Theory and Design

1. Edition September 2003
648 Pages, Hardcover
Wiley & Sons Ltd
Short Description
Semiconductor devices form the heart of the power electronics industry and play a pivotal role in the regulation and distribution of energy in the world. The insulated gate bipolar transistor (IGBT), which synergizes the strengths of MOS and bipolar technologies, is the most popular device in the medium power and medium frequency rang for appliance control, uninterruptible power supplies and motor drives. This book covers the theory and design aspects of IGBTs, starting from the selection of starting silicon through device and process design for achieving targeted specifications, to the device packaging.
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
* All-in-one resource
* Explains the fundamentals of MOS and bipolar physics.
* Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Power Device Evolution and the Advert of IGBT.
IGBT Fundamentals and Status Review.
MOS Components of IGBT.
Bipolar Components of IGBT.
Physics and Modeling of IGBT.
Latch-Up of Parasitic Thyristor in IGBT.
Design Considerations of IGBT Unit Cell.
IGBT Process Design and Fabrication Technology.
Power IGBT Modules.
Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies.
IGBT Circuit Applications.
Index.