Handbook of Nitride Semiconductors and Devices
Vol. 1: Materials Properties, Physics and Growth
Handbook of Nitride Semiconductors and Devices (Series Nr. 1)
1. Edition March 2008
LIV, 1257 Pages, Hardcover
560 Pictures (51 Colored Figures)
108 tables
Handbook/Reference Book
Short Description
Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Buy now
Price: 332,00 €
Price incl. VAT, excl. Shipping
Euro prices for Wiley-VCH and Ernst & Sohn titles are only valid for Germany. In EU countries, local VAT applies. Postage will be charged.
- Out of print -
Further versions
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. The handbook also deals with the properties and processes for thermal, optical (3-, 2-, 1-, 0-dimensional systems), electrical (at low- and high-electric fields, low- and high-magnetic fields for 3- and 2-dimensional systems), magnetism and magnetic properties (in dilute magnetic ion doped compounds) and spin-based device concepts. The present volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
1.1 Crystal Structure of Nitrides
1.2 Gallium Nitride
1.3 Aluminum Nitride
1.4 Indium Nitride
1.5 Ternary and Quaternary Alloys
2 Electronic Band Structure and Polarization Effects
2.1 Band Structure Calculations
2.2 General Strain Considerations
2.3 Effect of Strain on the Band Structure of GaN
2.4 k_p Theory and the Quasi-Cubic Model
2.5 Quasi-Cubic Approximation
2.6 Temperature Dependence of Wurtzite GaN Bandgap
2.7 Sphalerite (Zinc Blende) GaN
2.8 AlN
2.9 InN
2.10 Band Parameters for Dilute Nitrides
2.11 Confined States
2.12 Polarization Effects
3 Growth and Growth Methods for Nitride Semiconductors
3.1 Substrates for Nitride Epitaxy
3.2 A Primer on Conventional Substrates and their Preparation for Growth
3.3 GaN Epitaxial Relationship to Substrates
3.4 Nitride Growth Techniques
3.5 The Art and Technology of Growth of Nitrides
3.6 Concluding Remarks
4 Extended Defects, Point Defects, Role of Hydrogen, and Doping, Including Transition Metals
4.1 A Primer on Extended Defects
4.2 TEM Analysis of High Nitrogen Pressure (HNP) Solution Growth (HNPSG) and HVPE-Grown GaN
4.3 Point Defects and Autodoping
4.4 Defect Analysis by Deep-Level Transient Spectroscopy
4.5 Minority Carrier Lifetime
4.6 Positron Annihilation
4.7 Fourier Transform Infrared (FTIR), Electron Paramagnetic Resonance, and Optical Detection of Magnetic Resonance
4.8 Role of Hydrogen
4.9 Intentional Doping
4.10 Ion Implantation and Diffusion for Doping
4.11 Summary
