Radio-Frequency Integrated-Circuit Engineering
Wiley Series in Microwave and Optical Engineering (Series Nr. 1)

1. Edition April 2015
896 Pages, Hardcover
Professional Book
Short Description
Complementary metal-oxide-semiconductor (CMOS) is a technology for constructing integrated circuits. This book thoroughly discusses the theory, analysis, design, and high-frequency/high-speed characteristics and applications of printed-circuit transmission lines used in integrated circuits and systems. It discusses applications in all areas of high-frequency technology, including wireless communications, optical engineering, and computers. Accompanied by a solutions manual, this text is ideal for senior and advanced undergraduate students, as well as RF microwave engineers, optical engineers, solid-state device engineers, and computer engineers.
Radio-Frequency Integrated-Circuit Engineering addresses the theory, analysis and design of passive and active RFIC's using Si-based CMOS and Bi-CMOS technologies, and other non-silicon based technologies. The materials covered are self-contained and presented in such detail that allows readers with only undergraduate electrical engineering knowledge in EM, RF, and circuits to understand and design RFICs. Organized into sixteen chapters, blending analog and microwave engineering, Radio-Frequency Integrated-Circuit Engineering emphasizes the microwave engineering approach for RFICs.
* Provides essential knowledge in EM and microwave engineering, passive and active RFICs, RFIC analysis and design techniques, and RF systems vital for RFIC students and engineers
* Blends analog and microwave engineering approaches for RFIC design at high frequencies
* Includes problems at the end of each chapter
1 INTRODUCTION 1
Problems 5
2 FUNDAMENTALS OF ELECTROMAGNETICS 6
2.1 EM Field Parameters 6
2.2 Maxwell's Equations 7
2.3 Auxiliary Relations 8
2.4 Sinusoidal Time-Varying Steady State 9
2.5 Boundary Conditions 10
2.6 Wave Equations 12
2.7 Power 13
2.8 Loss and Propagation Constant in Medium 14
2.9 Skin Depth 16
2.10 Surface Impedance 17
Problems 19
3 LUMPED ELEMENTS 20
3.1 Fundamentals of Lumped Elements 20
3.2 Quality Factor of Lumped Elements 28
3.3 Modeling of Lumped Elements 30
3.4 Inductors 32
3.5 Lumped-Element Capacitors 60
3.6 Lumped-Element Resistors 72
References 75
Problems 76
4 TRANSMISSION LINES 85
4.1 Essentials of Transmission Lines 85
4.2 Transmission-Line Equations 86
4.3 Transmission-Line Parameters 93
4.4 Per-Unit-Length Parameters R,L,C, and G 97
4.5 Dielectric and Conductor Losses in Transmission Lines 107
4.6 Dispersion and Distortion in Transmission Lines 111
4.7 Group Velocity 115
4.8 Impedance, Reflection Coefficients, and Standing-Wave Ratios 117
4.9 Synthetic Transmission Lines 126
4.10 Tem and Quasi-Tem Transmission-Line Parameters 128
4.11 Printed-Circuit Transmission Lines 132
4.12 Transmission Lines in RFICs 144
4.13 Multi-Conductor Transmission Lines 152
References 173
Problems 174
Appendix 4: Transmission-Line Equations Derived From Maxwell's Equations 182
5 RESONATORS 186
5.1 Fundamentals of Resonators 186
5.2 Quality Factor 189
5.3 Distributed Resonators 205
5.4 Resonator's Slope Parameters 231
5.5 Transformation of Resonators 231
References 237
Problems 238
6 IMPEDANCE MATCHING 244
6.1 Basic Impedance Matching 244
6.2 Design of Impedance-Matching Networks 248
6.3 Kuroda Identities 262
References 266
Problems 266
7 SCATTERING PARAMETERS 271
7.1 Multiport Networks 271
7.2 Impedance Matrix 273
7.3 Admittance Matrix 274
7.4 Impedance and Admittance Matrix in RF Circuit Analysis 274
7.5 Scattering Matrix 279
7.6 Chain Matrix 293
7.7 Scattering Transmission Matrix 294
7.8 Conversion Between Two-Port Parameters 295
References 298
Problems 298
8 RF PASSIVE COMPONENTS 304
8.1 Characteristics of Multiport RF Passive Components 304
8.2 Directional Couplers 311
8.3 Hybrids 326
8.4 Power Dividers 339
8.5 Filters 345
References 371
Problems 372
9 FUNDAMENTALS OF CMOS TRANSISTORS FOR RFIC DESIGN 379
9.1 MOSFET Basics 379
9.2 MOSFET Models 386
9.3 Important MOSFET Frquencies 407
9.4 Other Important MOSFET Parameters 409
9.5 Varactor Diodes 409
References 412
Problems 412
10 STABILITY 418
10.1 Fundamentals of Stability 418
10.2 Determination of Stable and Unstable Regions 421
10.3 Stability Consideration for N-Port Circuits 427
References 427
Problems 428
11 AMPLIFIERS 430
11.1 Fundamentals of Amplifier Design 430
11.2 Low Noise Amplifiers 443
11.3 Design Examples 451
11.4 Power Amplifiers 455
11.5 Balanced Amplifiers 470
11.6 Broadband Amplifiers 489
11.7 Current Mirrors 548
References 552
Problems 553
A11.1 Fundamentals of Signal Flow Graph 563
A11.2 Signal Flow Graph of Two-Port Networks 563
A11.3 Derivation of Network's Parameters Using Signal Flow Graphs 566
References 571
12 OSCILLATORS 572
12.1 Principle of Oscillation 572
12.2 Fundamentals of Oscillator Design 575
12.3 Phase Noise 587
12.4 Oscillator Circuits 602
References 626
Problems 627
13 MIXERS 633
13.1 Fundamentals of Mixers 633
13.2 Mixer Types 641
13.3 Other Mixers 650
13.4 Mixer Analysis and Design 656
13.5 Sampling Mixer 667
References 689
Problems 690
14 SWITCHES 694
14.1 Fundamentals of Switches 694
14.2 Analysis of Switching MOSFET 697
14.3 SPST Switches 702
14.4 SPDT Switches 712
14.5 Ultra-Wideband Switches 714
14.6 Ultra-High-Isolation Switches 727
14.7 Filter Switches 737
References 739
Problems 739
15 RFIC SIMULATION, LAYOUT, AND TEST 747
15.1 RFIC Simulation 748
15.2 RFIC Layout 754
15.3 RFIC Measurement 758
References 784
Problems 784
16 SYSTEMS 788
16.1 Fundamentals of Systems 788
16.2 System Type 801
References 826
Problems 826
APPENDIX: RFIC DESIGN EXAMPLE: MIXER 830
A1.1 Circuit Design Specifications and General Design Information 830
A1.2 Mixer Design 830
A1.3 Mixer Optimization and Layout 835
A1.4 Simulation Results 836
A1.5 Measured Results 838
References 840
INDEX 841